Modeling of retention characteristics for metal and semiconductor nanocrystal memories
نویسندگان
چکیده
The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-j dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals. 2007 Elsevier Ltd. All rights reserved. PACS: 72.20.Jv; 73.63.Kv; 85.30.De
منابع مشابه
Technology for Self-Assembled Entities in Logic and Memory Units below the Lithography Limit
Discrete floating gates, nanocrystals or nitride traps, of Flash memory devices enable aggressive scaling of the tunneling oxide by relieving the total charge loss concern of the continuous floating gate [1]. However, a trade-off between the retention and program/erase (P/E) characteristics still remains. Nanocrystal memories with the direct tunneling oxide can still suffer serious retention de...
متن کاملFabrication and characterization of TiSi2 /Si heteronanocrystal metal-oxide- semiconductor memories
TiSi2 /Si heteronanocrystals on ultrathin oxide was fabricated with self-aligned silicidation method. Compared with Si nanocrystal memory device, TiSi2 /Si heteronanocrystal metal-oxidesemiconductor memory device shows higher writing saturation level, faster writing/erasing speed, longer retention, and larger memory window. Therefore, heteronanocrystals are very promising to replace Si nanocrys...
متن کاملTransient processes in a Ge/Si hetero-nanocrystal p-channel memory
Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics. 2006 Elsevier Ltd. All rights reserved. PACS: 72.20.Jv; 73.21.La; 73.90.+f; 74.50.+r
متن کاملPerspectives and challenges in nanoscale device modeling
In this paper, we discuss the role of adequate modelling tools in the development of nanoelectronic technology and devices, including both down-the-roadmap Complementary Metal-Oxide-Semiconductor (CMOS) technology and alternative nanodevices. Such tools can enable understanding of the relevant physical mechanisms on the one hand, and performance evaluation and optimization of device structures,...
متن کاملThe simulation of single-charging effects in the programming characteristics of nanocrystal memories
We present a Monte Carlo simulation and modelling method for single-electron nanocrystal memories including the nanocrystal inter-dot effect. A nanocrystal memory is modelled as a network of modified single-tunnel junctions for its programme operation and as a network of channel resistances for simulating drain current to extract its threshold voltage. Additionally, in each modelling, capacitiv...
متن کامل